1 power transistors 2 s b 09 36 , 2 s b 0 9 36 a ( 2sb936, 2sb936a ) silicon pnp epitaxial planar type for low-voltage switching n features l low collector to emitter saturation voltage v ce(sat) l high-speed switching l n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C40 C50 C20 C40 C5 C20 C10 40 1.3 150 C55 to +150 unit v v v a a w ?c ?c 2sb 0 936 2sb 0 936a 2sb 0 936 2sb 0 936a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t c ob t on t stg t f conditions v cb = C40v, i e = 0 v cb = C50v, i e = 0 v eb = C5v, i c = 0 i c = C10ma, i b = 0 v ce = C2v, i c = C 0.1a v ce = C2v, i c = C3a i c = C10a, i b = C 0.33a i c = C10a, i b = C 0.33a v ce = C10v, i c = C 0.5a, f = 10mhz v cb = C10v, i e = 0, f = 1mhz i c = C3a, i b1 = C 0.1a, i b2 = 0.1a min C20 C40 45 90 typ 100 400 0.1 0.5 0.1 max C50 C50 C50 260 C 0.6 C1.5 unit m a m a v v v mhz pf m s m s m s 2sb 0 936 2sb 0 936a 2sb 0 936 2sb 0 936a * h fe2 rank classification rank q p h fe2 90 to 180 130 to 260 unit: mm 1:base 2:collector 3:emitter n type package 8.5 0.2 6.0 0.5 10.0 0.3 10.5min. 2.0 1.5 0.1 1.5max. 0.8 0.1 5.08 0.5 2.54 0.3 1.1max. 0.5max. 1.0 0.1 3.4 0.3 2 13 unit: mm 8.5 0.2 4.4 0.5 2.0 10.0 0.3 14.7 0.5 4.4 0.5 6.0 0.3 3.4 0.3 2.54 0.3 5.08 0.5 1.0 0.1 0.8 0.1 1.5 +0 ?.4 3.0 +0.4 ?.2 0 to 0.4 1.1 max. r0.5 r0.5 123 1:base 2:collector 3:emitter n type package (ds)
2 p o w er t r ansistor 2sb 0 936, 2sb 0 936a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 16040 12080 14020 10060 0 50 40 30 20 10 (1) t c =ta (2) with a 50 50 2mm al heat sink (3) without heat sink (p c =1.3w) (1) (3) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2?0?? ?? 0 ?2 ?0 ? ? ? ? t c =25?c ?0ma ?0ma ?0ma ?0ma ?5ma ?0ma ?5ma ?0ma ?5ma ?0ma ?ma i b =?00ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.1 1 ?0?0.3 3 ?0.01 ?0 ? ?0.1 ?0.03 ?0.3 ? i c /i b =30 t c =100?c ?5?c 25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0?0.3 3 ?0.01 ?0 ? ?0.1 ?0.03 ?0.3 ? i c /i b =30 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.1 ? ?0 ?00?0.3 ? ?0 1 3 10 30 100 300 1000 3000 10000 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =?0v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ?0.1 1 ?0 ?00?0.3 3 ?0 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 8 ? ?? ?? ?? 0.01 10 1 0.1 0.03 0.3 3 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =30 (? b1 =i b2 ) v cc =?0v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ?0.1 1 ?0 ?00?0.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 non repetitive pulse t c =25?c 10ms t=1ms i cp i c 300ms 2sb 0 936a 2sb 0 936 collector to emitter voltage v ce ( v ) collector current i c ( a )
3 p o w er t r ansistor 2sb 0 936, 2sb 0 936a r th(t) t 10 ? 1010 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 50 50 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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